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Thin Cr 2 O 3 Films for Magnetoelectric Data Storage Deposited by Reactive E-beam Evaporation

✍ Scribed by Borisov, P.; Hochstrat, A.; Shvartsman, V. V.; Kleemann, W.; Eimüller, T.; RodrÍguez, A. Fraile

Book ID
120325459
Publisher
Taylor and Francis Group
Year
2008
Tongue
English
Weight
483 KB
Volume
370
Category
Article
ISSN
0015-0193

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Electrical properties of vacuum annealed La2O3 thin films grown by E-beam evaporation
✍ Yongshik Kim; Kunihiro Miyauchi; Shun-ichiro Ohmi; Kazuo Tsutsui; Hiroshi Iwai 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 246 KB

In this article, the conduction mechanisms of metal-oxide-semiconductor with vacuum annealed Lanthana (La 2 O 3 ) oxide film are investigated. Lanthana films with thicknesses of 3.5, 4.7, and 11 nm were deposited by E-beam evaporation on n-Si (100), and annealed at various temperatures (300-500 8C)