In this article, the conduction mechanisms of metal-oxide-semiconductor with vacuum annealed Lanthana (La 2 O 3 ) oxide film are investigated. Lanthana films with thicknesses of 3.5, 4.7, and 11 nm were deposited by E-beam evaporation on n-Si (100), and annealed at various temperatures (300-500 8C)
β¦ LIBER β¦
Anomalous phase formation during annealing of La2O3 thin films deposited by ion beam assisted electron beam evaporation
β Scribed by Chen Yang; Huiqing Fan; Yingxue Xi; Shaojun Qiu; Yunfei Fu
- Book ID
- 108290248
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 421 KB
- Volume
- 517
- Category
- Article
- ISSN
- 0040-6090
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