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Al0.2Ga0.8As/In0.15Ga0.85As MOSPHEMT with low temperature LPD-deposited Al2O3 as gate dielectric

✍ Scribed by Sarbani Basu; Pramod K. Singh; Po-Wen Sze; Yeong-Her Wang

Book ID
108271795
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
817 KB
Volume
54
Category
Article
ISSN
0038-1101

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πŸ“œ SIMILAR VOLUMES

Low interfacial density of states around
Low interfacial density of states around midgap in MBE-Ga2O3(Gd2O3)/In0.2Ga0.8As
✍ C.A. Lin; H.C. Chiu; T.H. Chiang; Y.C. Chang; T.D. Lin; J. Kwo; W.-E. Wang; J. D πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 693 KB

Systematic temperature-dependent capacitance-voltage and conductance measurements were used to study the electrical characteristics of molecular beam epitaxy (MBE) and atomic layer deposition (ALD) oxides on In 0.2 Ga 0.8 As/GaAs. The distribution of interfacial density of states (D it ) within the