✦ LIBER ✦

AFM Fabrication of Sub-10-Nanometer Metal-Oxide Devices with in Situ Control of Electrical Properties

✍ Scribed by Snow, E. S.; Campbell, P. M.

Book ID: 121155495
Publisher: American Association for the Advancement of Science
Year: 1995
Tongue: English
Weight: 542 KB
Volume: 270
Category: Article
ISSN: 0036-8075
DOI: 10.1126/science.270.5242.1639

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

AFM fabrication of metal-oxide devices w

AFM fabrication of metal-oxide devices with in situ control of electrical properties

✍ E.S. Snow; P.M. Campbell 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 305 KB

Metal wires and metal-oxide metal junctions were fabricated by anodic oxidation with a conducting atomic force microscope tip. The width of the wires and resistance of the junctions were controlled by real-time, in situ measurement of the device resistance during fabrication. Since the device proper

Thermal annealing effect on electrical p

Thermal annealing effect on electrical properties of metal nitride gate electrodes with hafnium oxide gate dielectrics in nano-metric MOS devices

✍ S. Chatterjee; Y. Kuo; J. Lu 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 631 KB

Impact of in situ SiN[sub x] layer grown

Impact of in situ SiN[sub x] layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures

✍ E. Cho; S. Seo; C. Jin; D. Pavlidis; G. Fu; J. Tuerck; W. Jaegermann 📂 Article 📅 2009 🏛 AVS (American Vacuum Society) 🌐 English ⚖ 700 KB

[IEEE ESSDERC 2003. 33rd European Solid-

[IEEE ESSDERC 2003. 33rd European Solid-State Device Research - ESSDERC '03 - Estoril, Portugal (16-18 Sept. 2003)] Electrical Performance of Electrical Packaging (IEEE Cat. No. 03TH8710) - Degradation of the Si-SiO/sub 2/ interface in MOSFETs with oxides in the 1-2 nanometer range under low field electrical stress

✍ Rahmoune, F.; Bauza, D. 📂 Article 📅 2003 🏛 IEEE ⚖ 293 KB