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AES depth profiling of a new type of multilayer structure composed of Cr/Ni layers of various thicknesses

✍ Scribed by A Zalar; P Panjan; S Hofmann

Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
371 KB
Volume
181
Category
Article
ISSN
0040-6090

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An ion beam technique has been developed that allows the preparation of bevels from semiconducting heteroepitaxial structures with smooth surfaces and very shallow angles between 0.1Γ„ and 0.001Γ„. The bevels are used for AES depth proÐling of heterostructures by the line scan technique. Comparison of