AES depth profile studies of interdiffusion in the AgCu bilayer and multilayer thin films
✍ Scribed by Bukaluk, A.
- Publisher
- John Wiley and Sons
- Year
- 1990
- Tongue
- English
- Weight
- 501 KB
- Volume
- 118
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Ion beam-induced interdi †usion and phase formation processes in thin Cu-Al and Ag-Al multilayers were investigated with in situ RBS and X-ray di †raction (XRD), respectively. The metal layers were deposited by evaporation on polished glassy carbon and single-crystal silicon substrates. In order to
## Abstract A general theoretical treatment is offered to obtain the critical depth (__d__~c~) values of the characteristic K, L and M x‐ray fluorescence signals as a function of sample grazing incidence angle (θ~i~′), exit angle (θ~e~′) and atomic number __Z__. It is shown, for example, that for θ