✦ LIBER ✦

Acoustic phonon pulse generation and detection in GaAs/Al0.3Ga0.7As quantumwells

✍ Scribed by Takehiro Tachizaki; Osamu Matsuda; Takashi Fukui; Jeremy J. Baumberg; Oliver B. Wright

Book ID: 104556721
Publisher: John Wiley and Sons
Year: 2004
Tongue: English
Weight: 259 KB
Volume: 1
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200405346

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Interdiffusion Behavior in Al0.3Ga0.7As/

Interdiffusion Behavior in Al0.3Ga0.7As/GaAs Superlattices

✍ Kim, S. K. ;Kang, T. W. ;Hong, C. Y. ;Cho, S. H. ;Kim, J. H. ;Kim, T. W. ;Chung, 📂 Article 📅 1993 🏛 John Wiley and Sons 🌐 English ⚖ 449 KB

Low noise GaAs and Al0.3Ga0.7As avalanch

Low noise GaAs and Al0.3Ga0.7As avalanche photodetectors

✍ Li, K.F.; Ong, D.S.; David, J.P.R.; Tozer, R.C.; Rees, G.J.; Robson, P.N.; Grey, 📂 Article 📅 1999 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 414 KB

Dependence of propagation loss on etchin

Dependence of propagation loss on etching depth in Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As strip-loaded type waveguides

✍ K. H. Park; Y. T. Byun; Y. Kim; S. H. Kim; S. S. Choi; Y. Chung 📂 Article 📅 1995 🏛 Springer 🌐 English ⚖ 529 KB

AlGaAs optical phonon replicas in the ph

AlGaAs optical phonon replicas in the photoluminescence spectra of GaAs layer in an Al0.3Ga0.7As/GaAs heterostructure

✍ S.J. Chua; S.J. Xu; X.H. Tang 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 334 KB

Zn diffusion in Al0.7Ga0.3As compared wi

Zn diffusion in Al0.7Ga0.3As compared with that in GaAs

✍ A. Flat; A.G. Milnes; D.L. Feucht 📂 Article 📅 1977 🏛 Elsevier Science 🌐 English ⚖ 172 KB

GaAs-based In0.29 Al0.71As/In0.3Ga0.7As

GaAs-based In0.29 Al0.71As/In0.3Ga0.7As high-electron mobility transistors

✍ Yi-Jen Chan; Chia-Song Wu; Jen-Inn Chyl; Jia-Lin Shieh 📂 Article 📅 1996 🏛 John Wiley and Sons 🌐 English ⚖ 484 KB 👁 1 views

## As heierostmctures grown on GaAs sub- strates with a step-graded metamolphic In,Ga, -As buffer were characterized. Cross-sectional TEM micrographs revealed that an unstrained and dislocation-free In,,,Ga,,,As layer used as a buffer can be obtained. A 0.6-pin-long gate HEMTbased on this heterost