In this paper we present results of multiple-angle-of-incidence (MAI) ellipsometry for strained GaAs/GaP x As 1-x superlattices (SL) with the composition x ΒΌ 0.4 and with different layer thickness in the range of 8-80 nm. SLs have been grown on the GaAs (100) substrates by chemical vapour deposition
β¦ LIBER β¦
Accuracy analysis in multiple angle of incidence ellipsometry
β Scribed by M.K. Smit; J.W. Verhoof
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 712 KB
- Volume
- 189
- Category
- Article
- ISSN
- 0040-6090
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