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A variational model for transistors

✍ Scribed by A. Martinez; M. Lozano; J. Barquillas; A. Carlosena

Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
417 KB
Volume
18
Category
Article
ISSN
0026-2692

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✦ Synopsis

This paper presents a linear variational model for transistors in their typical amplifying region, valid for BJTs as well as FETs.

The model allows one to determine the most important parameters of analog electronic systems: small-signal behaviour, thermal drift and effects of device mismatches.

πŸ“œ SIMILAR VOLUMES

A model for abrupt double heterojunction
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✍ Antonio J. GarcΓ­a-Loureiro; Juan M. LΓ³pez-GonzΓ‘lez πŸ“‚ Article πŸ“… 2004 πŸ› John Wiley and Sons 🌐 English βš– 178 KB

## Abstract In this paper, we present a model for double heterojunction bipolar transistors (DHBTs) that takes into account Fermi–Dirac statistics as well as an arbitrary injection level. The most commonly used models in the literature for heterojunction bipolar transistors (HBTs), bipolar junction