A variational model for transistors
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A. Martinez; M. Lozano; J. Barquillas; A. Carlosena
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Article
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1987
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Elsevier Science
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English
โ 417 KB
This paper presents a linear variational model for transistors in their typical amplifying region, valid for BJTs as well as FETs. The model allows one to determine the most important parameters of analog electronic systems: small-signal behaviour, thermal drift and effects of device mismatches.