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A Study of Vacancy-Type Defects in B + -Implanted SiO 2 /Si by a Slow Positron Beam

✍ Scribed by Uedono, Akira; Tanigawa, Shoichiro; Sugiura, Jun; Ogasawara, Makoto

Book ID
125543136
Publisher
Institute of Pure and Applied Physics
Year
1989
Tongue
English
Weight
692 KB
Volume
28
Category
Article
ISSN
0021-4922

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✍ B.S. Li; C.H. Zhang; Y.R. Zhong; D.N. Wang; L.H. Zhou; Y.T. Yang; H.H. Zhang; L. πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 254 KB

The Doppler broadening spectrum of a silicon wafer was measured using a variable-energy positron beam to investigate the effects of vacancy-type defects induced by 180 keV Ar ion implantation. The Sparameter in the damaged layer decreases with annealing temperature up to 673 K, and then increases wi