Study of random telegraph signals in a G
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T. Sakamoto; K. Nakamura
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Article
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1998
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Elsevier Science
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English
⚖ 104 KB
A GaAs/Al x Ga 1-x As heterointerface contains charge traps, which can capture and emit a single electron stochastically. We study random telegraph signals (RTSs) from these traps using a single electron tunneling (SET) transistor formed in the heterostructure. The output of the SET transistor switc