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A STUDY OF DIFFUSED LAYERS OF ARSENIC AND ANTIMONY IN SILICON USING THE ION-SCATTERING TECHNIQUE

โœ Scribed by Chou, S.

Book ID
120883522
Publisher
American Institute of Physics
Year
1970
Tongue
English
Weight
459 KB
Volume
17
Category
Article
ISSN
0003-6951

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The effect of phosphorus background conc
The effect of phosphorus background concentration on the diffusion of tin, arsenic and antimony in silicon
โœ A. Nylandsted Larsen; P.E. Andersen; P. Gaiduk; K. Kyllesbech Larsen ๐Ÿ“‚ Article ๐Ÿ“… 1989 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 415 KB

lhe effect of phosphorus background concentration on the di]]i4sion of tin, arsenic and antimony in silicon has been studied for phosphorus concentrations between about 9x 10 ~' ~ and 5 x 10 :ยฐ cm-~, corresponding to 10 <-n/n i <-60. 7he effectiw, difJ'usion coefficients are found to be proportional