✦ LIBER ✦

A study of amorphization energies in silicon for different implantation parameters

✍ Scribed by E. Friedland

Publisher: Elsevier Science
Year: 2007
Tongue: English
Weight: 298 KB
Volume: 256
Category: Article
ISSN: 0168-583X
DOI: 10.1016/j.nimb.2006.12.002

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Study of low-energy hydrogen implantatio

Study of low-energy hydrogen implantation in silicon

✍ K Srikanth; S Ashok 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 379 KB

Raman study of different phases in ion i

Raman study of different phases in ion implanted silicon

✍ L.P. Avakyants; E.D. Obrastsova; V.S. Gorelik 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 259 KB

ESR line share study of amorphous centre

ESR line share study of amorphous centres in ion implanted silicon

✍ Götz, G. ;Karthe, W. ;Schnabel, B. ;Sobolev, N. 📂 Article 📅 1978 🏛 John Wiley and Sons 🌐 English ⚖ 202 KB

Solid phase epitaxial regrowth of amorph

Solid phase epitaxial regrowth of amorphous layers in silicon created by low energy phosphorus implantation: A medium energy ion scattering study

✍ S. Ruffell; I.V. Mitchell; P.J. Simpson 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 210 KB

Medium energy ion scattering (MEIS) has been used to study the kinetics of solid phase epitaxial regrowth (SPEG) of ultrathin amorphous layers created by room temperature implantation of 5 keV energy phosphorus ions into Si(1 0 0). P ion fluences ranged from 5e14 cm À2 up to 1e16 cm À2 , the associa

Is there an influence of ion-beam-induce

Is there an influence of ion-beam-induced interfacial amorphization on the a/c-interface depth in silicon at common implantation energies?

✍ G. Otto; G. Hobler; P. Pongratz; L. Palmetshofer 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 681 KB

A study of defects in nanostructured amo

A study of defects in nanostructured amorphous silicon nitride

✍ Wang, Tao ;Zhang, Lide ;Mo, Chimei ;Hu, Jitong ;Xie, Cunyi 📂 Article 📅 1993 🏛 John Wiley and Sons 🌐 English ⚖ 302 KB