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ESR line share study of amorphous centres in ion implanted silicon

✍ Scribed by Götz, G. ;Karthe, W. ;Schnabel, B. ;Sobolev, N.


Publisher
John Wiley and Sons
Year
1978
Tongue
English
Weight
202 KB
Volume
50
Category
Article
ISSN
0031-8965

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Effect of boron on formation of intersti
✍ McCallum, J. C. ;Villis, B. J. ;Johnson, B. C. ;Stavrias, N. ;Burgess, J. E. ;Ch 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 310 KB

## Abstract The presence of boron in silicon has been shown to have a deleterious effect on the luminescence of interstitial‐related centres, particularly the W‐centre which is often observed after ion implantation and a low temperature anneal. Competition between silicon‐interstitial and boron‐int