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A study of defects in nanostructured amorphous silicon nitride

โœ Scribed by Wang, Tao ;Zhang, Lide ;Mo, Chimei ;Hu, Jitong ;Xie, Cunyi


Publisher
John Wiley and Sons
Year
1993
Tongue
English
Weight
302 KB
Volume
139
Category
Article
ISSN
0031-8965

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Recent results obtained by applying two methods, drive-level capacitance profiling and transient photocapacitance spectroscopy, to the study of deep defects in undoped hydrogenated amorphous silicon (a-Si:H) are reviewed. From the first method, we illustrate how it is possible to obtain the density,