We report the fabrication and study of gated quantum wires and interferometers based on a Si=SiGe heterostructure fabricated by electron lithography and anisotropic ion etching. In the wires, negative magnetoresistance connected with weak localisation e ects and in the ring, Aharonov-Bohm oscillatio
A single electron transistor based on Si/SiGe wires
β Scribed by A. Notargiacomo; L. Di Gaspare; G. Scappucci; G. Mariottini; E. Giovine; R. Leoni; F. Evangelisti
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 237 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0928-4931
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