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Gated wires and interferometers based on Si/SiGe heterostructures

✍ Scribed by O Estibals; Z.D Kvon; J.C Portal; A.Y Plotnikov; J.L Gauffier; N.J Woods; J Zhang; J.J Harris

Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
100 KB
Volume
13
Category
Article
ISSN
1386-9477

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✦ Synopsis

We report the fabrication and study of gated quantum wires and interferometers based on a Si=SiGe heterostructure fabricated by electron lithography and anisotropic ion etching. In the wires, negative magnetoresistance connected with weak localisation e ects and in the ring, Aharonov-Bohm oscillations were investigated in the temperature range 30 mK-5 K. The phase coherence time was found to be due to electron-electron scattering with small energy transfer and magnetic impurity scattering. High magnetic ΓΏeld Aharonov-Bohm oscillations connected with the interference of edge states current have been observed in Si=SiGe ring for the ΓΏrst time.

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