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A simple model to study the effect of Γ-X hybridization on the binding energy of shallow donors in quantum wells of GaAsAlAs

✍ Scribed by I.C. da Cunha Lima; P.D. Emmel; A. Ferreíra da Silva

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
328 KB
Volume
96
Category
Article
ISSN
0038-1098

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📜 SIMILAR VOLUMES

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The effects of mixing between the \(\Gamma\) and \(X\) valleys of the conduction band on the binding energy of a shallow donor in a thin type I AlAs/GaAs quantum well are investigated. The multivalley effective mass equations are solved variationally, with a separable hydrogen-like trial function. T

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The conduction and valence subband energies in the presence of an electric field are calculated using the fifth-order Runge-Kutta method. The binding energies of shallow donors, acceptors and excitons in finite-barrier GaAs/Ga 1-x Al x As quantum wells are then obtained variationally in the presence

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The binding energy of the single and double bound polaron bound to a helium-type donor impurity in quantum wells (QWs) subject to a perpendicular electric field are calculated by a variational method. The couplings of an electron and the impurity with various phonon modes are considered. The results