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Binding energy of a shallow donor in an AlAs/GaAs quantum well and the Γ - X mixing

✍ Scribed by Dag Wang

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
97 KB
Volume
13
Category
Article
ISSN
0749-6036

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✦ Synopsis

The effects of mixing between the (\Gamma) and (X) valleys of the conduction band on the binding energy of a shallow donor in a thin type I AlAs/GaAs quantum well are investigated. The multivalley effective mass equations are solved variationally, with a separable hydrogen-like trial function. The binding energy, as a function of well width, is found to be almost the same as in the zero mixing case, except in the vicinity of the type I to type II crossover, where mixing leads to a fundamentally different behavior, namely, instead of decreasing monotonically with increasing well width, the binding energy reaches a maximum close to the crossover.

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