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A simple method of calculating the minority-carrier current in heavily doped silicon

✍ Scribed by M. Kleefstra

Book ID
107856724
Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
414 KB
Volume
28
Category
Article
ISSN
0038-1101

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πŸ“œ SIMILAR VOLUMES

Trap controlled minority-carrier mobilit
Trap controlled minority-carrier mobility in heavily doped silicon
✍ A. Neugroschel; F.A. Lindholm; C.T. Sah πŸ“‚ Article πŸ“… 1985 πŸ› Elsevier Science βš– 381 KB

The activation behavior of the minority-carrier mobility and diffusivity in heavily doped (~102Β° cm -3) Si (Si:As) was investigated in the temperature range, 20 -350 K. Experimental results indicate that hole transitions between the valence band and localized shallow states give rise to the observed