Trap controlled minority-carrier mobility in heavily doped silicon

✍ Scribed by A. Neugroschel; F.A. Lindholm; C.T. Sah

• Publisher: Elsevier Science
• Year: 1985
• Weight: 381 KB
• Volume: 14
• Category: Article
• ISSN: 0379-6787
• DOI: 10.1016/0379-6787(85)90057-2

✦ Synopsis

The activation behavior of the minority-carrier mobility and diffusivity in heavily doped (~102° cm -3) Si (Si:As) was investigated in the temperature range, 20 -350 K. Experimental results indicate that hole transitions between the valence band and localized shallow states give rise to the observed behavior. The activation energy is about 10 meV, which suggests that the localized states originate from band tails but does not rule out trapping at boron atoms in the compensated n + region.