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Trap controlled minority-carrier mobility in heavily doped silicon

โœ Scribed by A. Neugroschel; F.A. Lindholm; C.T. Sah


Publisher
Elsevier Science
Year
1985
Weight
381 KB
Volume
14
Category
Article
ISSN
0379-6787

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โœฆ Synopsis


The activation behavior of the minority-carrier mobility and diffusivity in heavily doped (~102ยฐ cm -3) Si (Si:As) was investigated in the temperature range, 20 -350 K. Experimental results indicate that hole transitions between the valence band and localized shallow states give rise to the observed behavior. The activation energy is about 10 meV, which suggests that the localized states originate from band tails but does not rule out trapping at boron atoms in the compensated n + region.


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