The activation behavior of the minority-carrier mobility and diffusivity in heavily doped (~102Β° cm -3) Si (Si:As) was investigated in the temperature range, 20 -350 K. Experimental results indicate that hole transitions between the valence band and localized shallow states give rise to the observed
β¦ LIBER β¦
Effective mobility and bulk trapping in heavily doped CdSe
β Scribed by A. Van Calster
- Publisher
- Elsevier Science
- Year
- 1973
- Tongue
- English
- Weight
- 237 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0038-1101
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