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Measurement of the minority-carrier transport parameters in heavily doped silicon

โœ Scribed by Mertens, R.P.; Van Meerbergen, J.L.; Nijs, J.F.; Van Overstraeten, R.J.


Book ID
114593406
Publisher
IEEE
Year
1980
Tongue
English
Weight
745 KB
Volume
27
Category
Article
ISSN
0018-9383

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Trap controlled minority-carrier mobilit
โœ A. Neugroschel; F.A. Lindholm; C.T. Sah ๐Ÿ“‚ Article ๐Ÿ“… 1985 ๐Ÿ› Elsevier Science โš– 381 KB

The activation behavior of the minority-carrier mobility and diffusivity in heavily doped (~102ยฐ cm -3) Si (Si:As) was investigated in the temperature range, 20 -350 K. Experimental results indicate that hole transitions between the valence band and localized shallow states give rise to the observed