Influence of the dopant density profile on minority-carrier current in shallow, heavily doped emitters of silicon bipolar devices

✍ Scribed by Andrés Cuevas; Jerry G. Fossum; Rosa T. Young

• Publisher: Elsevier Science
• Year: 1985
• Tongue: English
• Weight: 739 KB
• Volume: 28
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/0038-1101(85)90005-x