Influence of the dopant density profile on minority-carrier current in shallow, heavily doped emitters of silicon bipolar devices : Andres Cuevas, Jerry G. Fossum and Rosa T. Young. Solid-St. Electron. 28 (3) 247 (1985)

• Publisher: Elsevier Science
• Year: 1986
• Tongue: English
• Weight: 121 KB
• Volume: 26
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(86)90646-3