𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A silicon vertical JFET compatible with standard 0.7 μm CMOS technology

✍ Scribed by A. Granier; M. Mouis; N. Degors; J. Kirtsch; A. Chantre


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
294 KB
Volume
19
Category
Article
ISSN
0167-9317

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


A high-performance 1–7 GHz UWB LNA using
✍ Shu-Hui Yen; Chang-Zhi Chen; Yo-Sheng Lin; Chi-Chen Chen 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 493 KB

design of multiband antennas using a single radiator. The theoretical prediction of antenna resonances can be achieved based on an effective medium model. Theoretical results have been verified via numerical simulations and measurements, which are all in good agreement. Further works include the imp

A 30-GHz 10-dB low noise amplifier using
✍ Hsin-Lung Tu; Tsung-Yu Yang; Kung-Hao Liang; Hwann-Kaeo Chiou 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 192 KB

## Abstract A three‐stage 30‐GHz low noise amplifier (LNA) was designed and fabricated in a standard 0.18‐μm CMOS technology. The LNA has demonstrated a 10‐dB gain and a minimum noise figure of 5.2 dB at 30 GHz. The achieved input 1‐dB compression point (IP~1 dB~) and third order intercept point (I

Miniature 60-GHz-band bandpass filter wi
✍ Mei-Ching Lu; Jin-Fa Chang; Li-Chun Lu; Yo-Sheng Lin 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 462 KB

## Abstract In this article, we demonstrate a miniature low‐insertion‐loss 60‐GHz‐band bandpass filter by standard 0.13 μm CMOS technology. Low‐insertion‐loss is achieved by adopting thick microstrip‐line (MSL) with optimized ground‐plane pattern as the needed inductors to minimize the metal and su