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High-voltage LDMOS transistors fully compatible with a deep-submicron 0.35 μm CMOS process

✍ Scribed by P.M. Santos; Vitor Costa; M.C. Gomes; Beatriz Borges; Mário Lança

No coin nor oath required. For personal study only.

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A resurfed high-voltage NMOS device full

✍ Yong Qiang Li; C.Andre T. Salama; Mike Seufert; Peter Schvan; Mike King 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 448 KB

High-voltage LDMOS transistors fully compatible with a deep-submicron 0.35&#xa0;μm CMOS process