A resurfed high-voltage NMOS device fully compatible with a low-voltage 0.8 μm BiCMOS technology

✍ Scribed by Yong Qiang Li; C.Andre T. Salama; Mike Seufert; Peter Schvan; Mike King

• Publisher: Elsevier Science
• Year: 1996
• Tongue: English
• Weight: 448 KB
• Volume: 39
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/0038-1101(95)00181-6