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a-SI TFTS with Stacked Gate Insulator of CVD-SiO2/PECVD-SiNx

โœ Scribed by Kaichi Fukuda; Nobuki Ibaraki


Book ID
112078832
Publisher
John Wiley and Sons
Year
1993
Tongue
English
Weight
622 KB
Volume
76
Category
Article
ISSN
8756-663X

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A stacked gate insulator consisting of photooxide and PECVD film prepared from SiH 4 and N 2 O for use in low-temperature poly-Si thin-film transistors has been developed. The rate of photooxidation using a Xe excimer lamp is the same for (100) and (111) single-crystal Si wafers, and SiO 2 with good