Criteria to obtain an accurate multiple-bias linear model for MESFET and HEMT de¨ices are proposed. Based on these criteria, an automatic extraction procedure to identify model parameters has been de¨eloped. The extraction procedure has been successfully checked on HEMT de¨ices in GaAs and InP techn
A robust integrated multibias parameter-extraction method for MESFET and HEMT models
β Scribed by van Niekerk, C.; Meyer, P.; Schreurs, D.M.M.-P.; Winson, P.B.
- Book ID
- 111874986
- Publisher
- IEEE
- Year
- 2000
- Tongue
- English
- Weight
- 276 KB
- Volume
- 48
- Category
- Article
- ISSN
- 0018-9480
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