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A robust 45 nm gate-length CMOSFET for 90 nm Hi-speed technology

✍ Scribed by K.Y. Lim; V. Chan; R. Rengarajan; H.K. Lee; N. Rovedo; E.H. Lim; S. Yang; F. Jamin; P. Nguyen; W. Lin; C.W. Lai; Y.W. Teh; J. Lee; L. Kim; Z. Luo; H. Ng; J. Sudijono; C. Wann; I. Yang

Book ID: 108269542
Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 756 KB
Volume: 50
Category: Article
ISSN: 0038-1101
DOI: 10.1016/j.sse.2006.03.031

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