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A high current gain gate-controlled lateral bipolar junction transistor with 90 nm CMOS technology for future RF SoC applications

✍ Scribed by Shuo-Mao Chen; Yean-Kuen Fang; Wen-Kuan Yeh; I.C. Lee; Yen-Ting Chiang


Book ID
108271678
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
450 KB
Volume
52
Category
Article
ISSN
0038-1101

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