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A Rigorous Classical Solution for the Drain Current of Doped Symmetric Double-Gate MOSFETs

✍ Scribed by Ortiz-Conde, Adelmo; Garcia-Sanchez, Francisco J.

Book ID
118269784
Publisher
IEEE
Year
2012
Tongue
English
Weight
938 KB
Volume
59
Category
Article
ISSN
0018-9383

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✍ Joaquín Alvarado; Benjamin Iñiguez; Magali Estrada; Denis Flandre; Antonio Cerde 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 374 KB

## Abstract Recently we developed a model for symmetric double‐gate MOSFETs (SDDGM) that, for the first time, considers the doping concentration in the Si film in the complete range from 1×10^14^ to 3×10^18^ cm^−3^. The model covers a wide range of technological parameters and includes short channe