A formula for the central potential’s maximum magnitude in arbitrarily doped symmetric double-gate MOSFETs

Implementation of the symmetric doped do

Implementation of the symmetric doped double-gate MOSFET model in Verilog-A for circuit simulation

✍ Joaquín Alvarado; Benjamin Iñiguez; Magali Estrada; Denis Flandre; Antonio Cerde 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 374 KB

## Abstract Recently we developed a model for symmetric double‐gate MOSFETs (SDDGM) that, for the first time, considers the doping concentration in the Si film in the complete range from 1×10^14^ to 3×10^18^ cm^−3^. The model covers a wide range of technological parameters and includes short channe