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Extended Version of Carrier-Based Analytical Model to Account for the Doped Effect of Symmetric Double-Gate MOSFETs

✍ Scribed by Fu, Yue; Zhang, Lining; Zhou, Xingyue; He, Jin

Book ID
111917776
Publisher
American Scientific Publishers
Year
2010
Tongue
English
Weight
602 KB
Volume
7
Category
Article
ISSN
1546-1955

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## Abstract Recently we developed a model for symmetric double‐gate MOSFETs (SDDGM) that, for the first time, considers the doping concentration in the Si film in the complete range from 1Γ—10^14^ to 3Γ—10^18^ cm^βˆ’3^. The model covers a wide range of technological parameters and includes short channe