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A physically based analytical model for the threshold voltage of strained-Si n-MOSFETs

✍ Scribed by Nayfeh, H.M.; Hoyt, J.L.; Antoniadis, D.A.


Book ID
114617619
Publisher
IEEE
Year
2004
Tongue
English
Weight
328 KB
Volume
51
Category
Article
ISSN
0018-9383

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