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A self-consistent analytic threshold voltage model for thin SOI n-channel MOSFETs

โœ Scribed by Jin-Ho Choi; Ho-Jun Song; Kang-Deog Suh; Jae-Woo Park; Choong-Ki Kim


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
348 KB
Volume
34
Category
Article
ISSN
0038-1101

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A self-consistent model for short-channe
โœ M. El Banna; M. El Nokali ๐Ÿ“‚ Article ๐Ÿ“… 1989 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 579 KB

A dc model for short-channel MOSFETs is presented in this paper. Several second-order effects associated with small-geometry MOSFETs such as mobility degradation, carrier velocity saturation and channel length modulation are included in the model. The analysis emphasizes the modelling of the output