𝔖 Bobbio Scriptorium

✦ LIBER ✦

A novel floating-gate method for measurement of ultra-low hole and electron gate currents in MOS transistors

✍ Scribed by Nissan-Cohen, Y.

Book ID: 120639182
Publisher: IEEE
Year: 1986
Tongue: English
Weight: 257 KB
Volume: 7
Category: Article
ISSN: 0741-3106
DOI: 10.1109/EDL.1986.26474

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

The generation and characterization of e

The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors

✍ Doyle, B.S.; Bourcerie, M.; Bergonzoni, C.; Benecchi, R.; Bravis, A.; Mistry, K. 📂 Article 📅 1990 🏛 IEEE 🌐 English ⚖ 913 KB

A test structure for the electrical meas

A test structure for the electrical measurement of the misalignment between gate and diffusion regions in MOS/LSI circuits : Alicja Gluzinska, Andrzej A. Czerwinski and Maria Czerwinska. Electron Technol., Warsaw17 (1/2), 39 (1984)

📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 132 KB

[IEEE ICMTS 1998. International Conferen

[IEEE ICMTS 1998. International Conference on Microelectronic Test Structures - Kanazawa, Japan (23-26 March 1998)] ICMTS 1998. Proceedings of 1998 International Conference on Microelectronic Test Structures (Cat. No.98CH36157) - A novel method for base and emitter resistance extraction in bipolar junction transistors from static and low frequency noise measurements

✍ Llinares, P.; Ghibaudo, G.; Gambetta, N.; Mourier, Y.; Monroy, A.; Lecoy, G.; Ch 📂 Article 📅 1998 🏛 IEEE ⚖ 307 KB