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A nonpinchoff gradual channel model for deep-submicron MOSFET's

โœ Scribed by Fujishima, M.; Asada, K.


Book ID
114535628
Publisher
IEEE
Year
1993
Tongue
English
Weight
301 KB
Volume
40
Category
Article
ISSN
0018-9383

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A fringing-capacitance model for deep-su
โœ F. Ji; J.P. Xu; P.T. Lai; J.G. Guan ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 189 KB

An analytical model of fringing capacitances for deep-submicron MOSFET with high-k gate dielectric, including gate dielectric fringing-capacitance and gate electrode fringing-capacitance, is obtained by the conformal-mapping transformation method. It is demonstrated that the fringing-capacitance eff