Compensation by deep-level defects and self-compensation of shallow donors in AlN are discussed in the light of results of a high-frequency pulse electron paramagnetic resonance (EPR) and electronnuclear double resonance (ENDOR) study. It was suggested on the basis of the large mostly isotropic hype
โฆ LIBER โฆ
A new step in high-frequency EPR of defects in semiconductors
โ Scribed by H. Blok; J.A.J.M. Disselhorst; S.B. Orlinskii; J. Schmidt; P.G. Baranov
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 298 KB
- Volume
- 340-342
- Category
- Article
- ISSN
- 0921-4526
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