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A new static memory cell based on the reverse base current effect of bipolar transistors

✍ Scribed by Sakui, K.; Hasegawa, T.; Fuse, T.; Watanabe, S.; Ohuchi, K.; Masuoka, F.

Book ID: 114535397
Publisher: IEEE
Year: 1989
Tongue: English
Weight: 285 KB
Volume: 36
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.24372

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