Analysis and design of a new SRAM memory cell based on vertical lambda bipolar transistor

✍ Scribed by Shang-Ming Wang; Ching-Yuan Wu

• Book ID: 108360897
• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 178 KB
• Volume: 34
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(03)00129-0