A new static memory cell based on thenegative resistance characteristic of a UJT

✍ Scribed by K. Ramkumar; M. Satyam

• Book ID: 104157665
• Publisher: Elsevier Science
• Year: 1988
• Tongue: English
• Weight: 229 KB
• Volume: 19
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(88)80084-3

✦ Synopsis

This paper indicates the possibility of a new static RAM cell based on the negative resistance in the output voltage-current characteristics of a unijunction transistor (UJT). The dependence of the negative resistance characteristic on the parameters of the UJT and its impact on the performance of the RAM cell are discussed. The possibility of integrating the components of the cell into a single structure in order to reduce its overall size is also discussed.