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A new InGaAs/InGaAsP delta -strained multiple-quantum-well laser grown by chemical-beam epitaxy

โœ Scribed by Yang, L.; Wu, M.C.; Chen, Y.K.; Tsang, W.T.; Chu, S.N.G.; Sergent, A.M.

Book ID
119788632
Publisher
IEEE
Year
1991
Tongue
English
Weight
269 KB
Volume
3
Category
Article
ISSN
1041-1135

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## Abstract The operation in the 1020 nm wavelength range of strainedโ€layer InGaAs/GaAs separateโ€confinementโ€heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 ร… thick InGaAs quantum well with an indium content of 25%, which is close to cri