Al-SI-Cu films deposIted on substrates of SI, borophosphate silicate glass and TiW mth improved electrical properties (lower sheet resistance) and rehatnhty (lugher Al[lll] diffraction mtensity) obtained by the proposed metalbzatlon process are described A chemometrx approach of umfymg the expernnen
β¦ LIBER β¦
A new high-density metallization process for large-scale integrated circuits
β Scribed by Wonchan Kim
- Book ID
- 114594932
- Publisher
- IEEE
- Year
- 1984
- Tongue
- English
- Weight
- 870 KB
- Volume
- 31
- Category
- Article
- ISSN
- 0018-9383
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