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A model for phosphorus segregation at the silicon-silicon dioxide interface

✍ Scribed by F. Lau; L. Mader; C. Mazure; Ch. Werner; M. Orlowski

Publisher
Springer
Year
1989
Tongue
English
Weight
476 KB
Volume
49
Category
Article
ISSN
1432-0630

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πŸ“œ SIMILAR VOLUMES

A new model for the interaction mechanis
A new model for the interaction mechanism at the goldβ€”silicon interface
✍ Wolfgang Losch πŸ“‚ Article πŸ“… 1992 πŸ› Elsevier Science 🌐 English βš– 175 KB

Based on the conception of a limited number of low-temperature reaction centers, a model of the interaction mechanism at the Au/Si interface is discussed. These centers appear to be selected atomic sites with high surface-state densities permitting a low activation energy of reaction. Their number d