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A new model for the interaction mechanism at the gold—silicon interface

✍ Scribed by Wolfgang Losch

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
175 KB
Volume
33
Category
Article
ISSN
0924-4247

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✦ Synopsis

Based on the conception of a limited number of low-temperature reaction centers, a model of the interaction mechanism at the Au/Si interface is discussed. These centers appear to be selected atomic sites with high surface-state densities permitting a low activation energy of reaction. Their number depends on the surface structure of the substrate.

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