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A methodology to extract the channel current of permeable gate oxide MOSFETs

✍ Scribed by Palestri, P.; Esseni, D.; Selmi, L.; Guegan, G.; Sangiorgi, E.


Book ID
114617093
Publisher
IEEE
Year
2003
Tongue
English
Weight
611 KB
Volume
50
Category
Article
ISSN
0018-9383

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Contributions of the gate current and ch
✍ R. FernΓ‘ndez; R. RodrΓ­guez; M. NafrΓ­a; X. Aymerich πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 133 KB

A new approach to the modelling of the post-breakdown (BD) performance of MOSFETs for circuit simulation is presented, which separately considers the additional post-BD gate current and the variation of the MOSFET channel current. The post-BD gate current is modelled using an improved equivalent cir