Contributions of the gate current and ch
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R. FernΓ‘ndez; R. RodrΓguez; M. NafrΓa; X. Aymerich
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Article
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2008
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Elsevier Science
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English
β 133 KB
A new approach to the modelling of the post-breakdown (BD) performance of MOSFETs for circuit simulation is presented, which separately considers the additional post-BD gate current and the variation of the MOSFET channel current. The post-BD gate current is modelled using an improved equivalent cir