Impact of tunnel currents and channel resistance on the characterization of channel inversion layer charge and polysilicon-gate depletion of sub-20-Å gate oxide MOSFETs

✍ Scribed by Ahmed, K.; Ibok, E.; Yeap, G.C.-F.; Qi Xiang; Ogle, B.; Wortman, J.J.; Hauser, J.R.

• Book ID: 114537814
• Publisher: IEEE
• Year: 1999
• Tongue: English
• Weight: 206 KB
• Volume: 46
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.777153